fdt434p p-channel 2.5v specified powertrench ? ?? ? mosfet general description this p-channel 2.5v specified mosfet is produced using fairchild semiconductor?s advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. applications ? low dropout regulator ? dc/dc converter ? load switch ? motor driving features ? ?5.5 a, ?20 v. r ds(on) = 0.050 ? @ v gs = ?4.5 v r ds(on) = 0.070 ? @ v gs = ?2.5 v. ? low gate charge (13nc typical) ? high performance trench technology for extremely low r ds(on) . ? high power and current handling capability in a widely used surface mount package. g d s d sot-22 3 s g d d absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain-source voltage ?20 v v gss gate-source voltage 8 v i d drain current ? continuous (note 1a) ?6 a ? pulsed ?30 power dissipation for single operation (note 1a) 3 (note 1b) 1.3 p d (note 1c) 1.1 w t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 42 c/w r jc thermal resistance, junction-to-case (note 1) 12 c/w package marking and ordering information device marking device reel size tape width quantity 434 fdt434p 13?? 12mm 2500 units fdt434p april 2011 ?201 1 fairchild semiconductor corporation 1 www.fairchildsemi.com fdt434p rev. c2
electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain?source breakdown voltage v gs = 0 v, i d = ?250 a ?20 v ?bv dss ? t j breakdown voltage temperature coefficient i d = ?250 a,referenced to 25 c ?28 mv/ c i dss zero gate voltage drain current v ds = ?16 v, v gs = 0 v ?1 a i gssf gate?body leakage current, forward v gs = 8 v, v ds = 0 v 100 na i gssr gate?body leakage current, reverse v gs = ?8 v v ds = 0 v ?100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = ?250 a ?0.4 ?0.6 ?1 v ?v gs(th) ? t j gate threshold voltage temperature coefficient i d = ?250 a,referenced to 25 c 2 mv/ c r ds(on) static drain?source on?resistance v gs = ?4.5 v, i d = ?6 a v gs = ?2.5 v, i d = ?4 a v gs = ?4.5 v, i d = ?6 a t j =125 c 0.040 0.050 0.067 0.050 0.070 0.083 ? i d(on) on?state drain current v gs = ?4.5 v, v ds = ?5 v ?20 a g fs forward transconductance v ds = ?10 v, i d = ?6 a 6.5 s dynamic characteristics c iss input capacitance 1187 pf c oss output capacitance 270 pf c rss reverse transfer capacitance v ds = ?10 v, v gs = 0 v, f = 1.0 mhz 114 pf switching characteristics (note 2) t d(on) turn?on delay time 8 16 ns t r turn?on rise time 15 25 ns t d(off) turn?off delay time 45 65 ns t f turn?off fall time v dd = ?5 v, i d = ?1 a, v gs = ?4.5 v, r gen = 6 ? 30 50 ns q g total gate charge 13 19 nc q gs gate?source charge 1.8 nc q gd gate?drain charge v ds = ?10 v, i d = ?6 a, v gs = ?4.5 v 3 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current ?2.5 a v sd drain?source diode forward voltage v gs = 0 v, i s = ?2.5 a (note 2) ?0.75 ?1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the so lder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design. a) 42c/w when mounted on a 1in 2 pad of 2 oz copper b) 95/w when mounted on a .0066 in 2 pad of 2 oz copper c) 110/w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 s, duty cycle < 2.0% fdt434p ?201 1 fairchild semiconductor corporation 2 www.fairchildsemi.com fdt434p rev. c2
typical characteristics 0 4 8 12 16 20 012345 -v ds , drain-source voltage (v) -i d , drain current (a) -3.0v -1.5 v -2.5v -2.0v v gs = -4.5v 0 5 10 15 20 0.8 1 1.2 1.4 1.6 1.8 - i , drain current (a) drain-source on-resistance v = -2.5v gs d r , normalized ds(on) -4.5v -3.0v -4.0v -3.5v figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. -50 -25 0 25 50 75 100 125 150 0.6 0.8 1 1.2 1.4 1.6 t , junction temperature (c) drain-source on-resistance v = - 4.5v gs i = - 6 a d r , normalized ds(on) j 12345 0 0.03 0.06 0.09 0.12 0.15 - v , gate to source voltage (v) drain-source on-resistance gs r ds(on) 25c t =125c a i = -6 a d figure 3. on-resistance variation withtemperature. figure 4. on-resistance variation with gate-to-source voltage. 0.9 1.2 1.5 1.8 2.1 2.4 2.7 0 3 6 9 12 15 -v , gate to source voltage (v) - i , drain current (a) v = -5v ds gs d t = -55c j 125c 25c 00.20.40.60.811.21.4 0.001 0.01 0.1 1 15 -v , body diode forward voltage (v) - i , reverse drain current (a) 25c -55c v = 0v gs sd s t = 125c j figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fdt434p ?201 1 fairchild semiconductor corporation 3 www.fairchildsemi.com fdt434p rev. c2
typical characteristics 0 3 6 9 12 15 0 1 2 3 4 5 q , gate charge (nc) -v , gate-source voltage (v) g gs v = -5v ds -10v i = -6.0a d -15v 0 200 400 600 800 1000 1200 1400 1600 1800 024681012 -v ds , drain to source voltage (v) capacitance (pf) c iss c rss c oss f = 1mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-source voltage (v) -i d , drain current (a) v gs = -4.5v single pulse r ja = 110 o c/w t a = 25 o c r ds(on) limit dc 1s 10s 100ms 10ms 100 s 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 100 1000 single pulse time (sec) power (w) single pulse r ja = 110 o c/w t a = 25 o c figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r ja (t) = r(t) * r ja r ja = 110 c/w t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient thermal response will change depending on the circuit board design. fdt434p ?201 1 fairchild semiconductor corporation 4 www.fairchildsemi.com fdt434p rev. c2
trademarks the following includes registered and unregistered trademarks and service marks, owned by fairch ild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the term s of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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d = 0.5 fdt434p ?201 1 fairchild semiconductor corporation 5 www.fairchildsemi.com fdt434p rev. c2
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